GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

被引:24
|
作者
ZHANG, YH
LI, YX
JIANG, DH
YANG, XP
ZHANG, PH
机构
[1] National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
关键词
D O I
10.1063/1.111258
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).
引用
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页码:3416 / 3418
页数:3
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