LASER CVD OF A-SI-H FROM SIH4 AND SI2H6 - RELATIONS BETWEEN CHEMISTRY, GROWTH-RATE AND FILM PROPERTIES

被引：7
|
作者：
HESCH, K [1 ]
HESS, P [1 ]
OETZMANN, H [1 ]
SCHMIDT, C [1 ]
机构：
[1] ASEA BROWN BOVERI,CORP RES,W-6900 HEIDELBERG,GERMANY
来源：
APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(90)90149-T
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Films of a-Si:H were deposited from SiH4 and from Si2H6 employing a CW CO2 laser at 10.61 μm in a parallel configuration of the laser beam and substrate surface. In situ mass spectrometry was used to monitor the gas-phase chemistry. A strong influence of laser power upon gas-phase composition was found. Relations between the formation of higher silanes, deposition rate and electrical properties of the films are reported. © 1990.
引用
收藏
页码：233 / 238
页数：6
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