PREPARATION OF (111)-ORIENTED BETA-TA2O5 THIN-FILMS BY CHEMICAL VAPOR-DEPOSITION USING METALORGANIC PRECURSORS

被引：30
|
作者：
TOMINAGA, K [1 ]
MUHAMMET, R [1 ]
KOBAYASHI, I [1 ]
OKADA, M [1 ]
机构：
[1] NIPPON SANSO CORP, KAWASAKI LAB, KAWASAKI 210, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5A期
关键词：
BETA-TA2O5 THIN FILM; (111) ORIENTATION; MOCVD; PIEZOELECTRIC; SAW CHARACTERISTICS;
D O I：
10.1143/JJAP.31.L585
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tantalum pentaoxide thin films with orthorhombic structure have been grown on quartz and Si(100) substrates at 600 approximately 700-degrees-C under reduced pressure of 5 Torr by metalorganic chemical vapor deposition. Ta(OC2H5)5 and Ta(DPM)4Cl were used as the source materials, and were compared with each other with respect to deposition behavior, crystal structure and orientation of Ta2O5 films. When the Ta(DPM)4Cl precursor was used, fine (111)-oriented Ta2O5 films were obtained on quartz and Si(100) substrates in a temperature range of 625 approximately 675-degrees-C.
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页码：L585 / L587
页数：3
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