OBSERVATION OF 2 LONG-LIVED MOLECULAR-STATES OF O-2 ON SI(111)7X7 AT ROOM-TEMPERATURE

被引：28

作者：

COMTET, G ^{[1
]}

DUJARDIN, G ^{[1
]}

HELLNER, L ^{[1
]}

HIRAYAMA, T ^{[1
]}

ROSE, M ^{[1
]}

PHILIPPE, L ^{[1
]}

BESNARDRAMAGE, MJ ^{[1
]}

机构：

[1] UNIV PARIS 11, CNRS, PHOTOPHYS MOLEC LAB, F-91405 ORSAY, FRANCE

来源：

SURFACE SCIENCE | 1995年 / 331卷

关键词：

OXYGEN; SILICON; VISIBLE AND ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0039-6028(95)00080-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Adsorption of O-2 on Si(111)7 x 7 at room temperature is studied by photoemission. Low exposures of oxygen, from 0.1 to 10 langmuir, lead to the formation of two surface states, at 3.8 and 5.1 eV below the Fermi level. The state at 3.8 eV was previously assigned to molecular oxygen chemisorbed in the paul, para and grif configurations. The state at 5.1 eV can be assigned to a different adsorption configuration of molecular oxygen on Si(111)7 x 7. The lifetime of both states is the same within the experimental uncertainty. The lifetime of the 3.8 eV state is found to be of the order of 400 min, i.e. much longer than the previously measured lifetime.

引用

页码：370 / 374

页数：5

共 50 条

[31] Observation of room-temperature long-lived trapped exciton in WS2/RGO heterostructure
Mondal, Anirban
Yadav, Rajesh Kumar
Shrivastava, Megha
Rout, Chandra Sekhar
Karmakar, Debjani
Adarsh, K. V.
APPLIED PHYSICS LETTERS, 2020, 117 (14)
[32] Total Cu coverage from Cu(hfac)2 deposition on Si(111)-7x7 at room temperature using HIBS
Ionescu, C.
Ionescu, M. A.
Ciuca, I.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2012, 6 (1-2): : 266 - 268
[33] Adsorption of formic acid on Si(111)7x7 at room temperature: a valence band photoemission and Si2p photodesorption study
Carbone, Marilena
SURFACE AND INTERFACE ANALYSIS, 2015, 47 (02) : 216 - 221
[34] BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF THE AU/SI(111)7X7 AND AU/CAF2/SI(111)7X7 INTERFACES
CUBERES, MT
BAUER, A
WEN, HJ
PRIETSCH, M
KAINDL, G
APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2300 - 2302
[35] REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE
BECKER, RS
GOLOVCHENKO, JA
HAMANN, DR
SWARTZENTRUBER, BS
PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2032 - 2034
[36] Dissociative adsorption of SiH2Cl2 on Si(111)7x7
Fehrenbacher, M
Rauscher, H
Behm, RJ
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 1997, 198 : 205 - 220
[37] INTERACTION OF SI2H6 WITH A SI(111)-7X7 SURFACE
IMBIHL, R
DEMUTH, JE
GATES, SM
SCOTT, BA
PHYSICAL REVIEW B, 1989, 39 (08): : 5222 - 5233
[38] Hydrogen-bond mediated transitional adlayer of glycine on Si(111)7x7 at room temperature
Zhang, L.
Chatterjee, A.
Ebrahimi, M.
Leung, K. T.
JOURNAL OF CHEMICAL PHYSICS, 2009, 130 (12):
[39] ADSORBED STATES OF H2S ON THE SI(111)(7X7) SURFACE - A VIBRATIONAL STUDY
KUBOTA, Y
EDAMOTO, K
ONCHI, M
NISHIJIMA, M
SOLID STATE COMMUNICATIONS, 1985, 56 (01) : 145 - 148
[40] RECONSTRUCTION OF SEMICONDUCTOR SURFACES - SI(111)-2X1, SI(111)-7X7, AND GAAS(110)
PANDEY, KC
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 1099 - 1100

← 1 2 3 4 5 →