MAGNETOTRANSPORT IN LATERAL PERIODIC POTENTIALS FORMED BY SURFACE-LAYER-INDUCED MODULATION IN INAS-ALSB QUANTUM-WELLS

被引：5

作者：

NGUYEN, C ^{[1
]}

BRAR, B ^{[1
]}

JAYARAMAN, V ^{[1
]}

LORKE, A ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of strong lateral superlattice potentials in not-intentionally doped InAs-AlSb quantum wells. By spatially alternating the surface layer between thin layers of InAs and GaSb, which shift the pinning position of the Fermi level at the surface, we induce a lateral density modulation of 4 X 10(11) cm-2, equivalent to a potential modulation of 30 meV inside quantum wells 20 nm away from the surface. Both one- and two-dimensional lateral potentials were fabricated and studied by magnetotransport measurements. Strong commensurability oscillations are observed.

引用

页码：2251 / 2253

页数：3

共 20 条

[1] SURFACE-LAYER MODULATION OF ELECTRON CONCENTRATIONS IN INAS-ALSB QUANTUM-WELLS
NGUYEN, C
BRAR, B
KROEMER, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1706 - 1709
[2] PHOTOLUMINESCENCE FROM NARROW INAS-ALSB QUANTUM-WELLS
BRAR, B
KROEMER, H
IBBETSON, J
ENGLISH, JH
APPLIED PHYSICS LETTERS, 1993, 62 (25) : 3303 - 3305
[3] MAGNETOTRANSPORT IN INAS/ALSB QUANTUM-WELLS WITH LARGE ELECTRON-CONCENTRATION MODULATION
NGUYEN, C
ENSSLIN, K
KROEMER, H
SURFACE SCIENCE, 1992, 267 (1-3) : 549 - 552
[4] LATERAL POTENTIAL MODULATION IN INAS/ALSB QUANTUM-WELLS BY WET ETCHING
UTZMEIER, T
SCHLOSSER, T
ENSSLIN, K
KOTTHAUS, JP
BOLOGNESI, CR
NGUYEN, C
KROEMER, H
SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 575 - 578
[5] QUASI-PARTICLE TRANSPORT AND INDUCED SUPERCONDUCTIVITY IN INAS-ALSB QUANTUM-WELLS WITH NB ELECTRODES
KROEMER, H
NGUYEN, C
HU, EL
YUH, EL
THOMAS, M
WONG, KC
PHYSICA B-CONDENSED MATTER, 1994, 203 (3-4) : 298 - 306
[6] SURFACE DONOR CONTRIBUTION TO ELECTRON SHEET CONCENTRATIONS IN NOT-INTENTIONALLY DOPED INAS-ALSB QUANTUM-WELLS
NGUYEN, C
BRAR, B
KROEMER, H
ENGLISH, JH
APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1854 - 1856
[7] EFFECTS OF THE INTERFACE BONDING TYPE ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF INAS-ALSB QUANTUM-WELLS
BRAR, B
IBBETSON, J
KROEMER, H
ENGLISH, JH
APPLIED PHYSICS LETTERS, 1994, 64 (25) : 3392 - 3394
[8] GROWTH OF INAS-ALSB QUANTUM-WELLS HAVING BOTH HIGH MOBILITIES AND HIGH-CONCENTRATIONS
NGUYEN, C
BRAR, B
BOLOGNESI, CR
PEKARIK, JJ
KROEMER, H
ENGLISH, JH
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (02) : 255 - 258
[9] EFFECTS OF BARRIER THICKNESSES ON THE ELECTRON-CONCENTRATION IN NOT-INTENTIONALLY DOPED INAS-ALSB QUANTUM-WELLS
NGUYEN, C
BRAR, B
KROEMER, H
ENGLISH, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 898 - 900
[10] INFRARED ELECTROABSORPTION MODULATION AT NORMAL INCIDENCE IN ASYMMETRICALLY STEPPED ALSB/INAS/GASB/ALSB QUANTUM-WELLS
XIE, H
WANG, WI
MEYER, JR
JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 92 - 96

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