ELECTRICAL MEASUREMENT OF THE DOPANT SEGREGATION PROFILE AT THE GRAIN-BOUNDARY IN SILICON BICRYSTALS

被引：5
|
作者：
BRONIATOWSKI, A
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期
关键词：
D O I：
10.1063/1.341279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4516 / 4525
页数：10
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