SLOW SURFACE-STATES IN AMORPHOUS-SILICON

被引：0

作者：

BYKOV, AV ^{[1
]}

ZARIFYANTS, YA ^{[1
]}

RODINA, AA ^{[1
]}

UTKINEDIN, DP ^{[1
]}

机构：

[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1981年 / 04期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：117 / 118

页数：2

共 50 条

[21] SURFACE-STATES AND BARRIER HEIGHTS OF METAL-AMORPHOUS SILICON SCHOTTKY BARRIERS
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CARLSON, DE
[J]. SOLID STATE COMMUNICATIONS, 1977, 23 (07) : 421 - 424
[22] SURFACE PHOTOVOLTAGE IN HYDROGENATED AMORPHOUS-SILICON
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 575 - 577
[23] ROUGHNESS EFFECTS IN SURFACE-STATES OF SILICON
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[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 228 - 232
[24] FAST AND SLOW METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
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CHEN, L
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (03) : 400 - 402
[25] SURFACE-STATES AT THE SILICON ELECTROLYTE INTERFACE
MANY, A
WOLOVELSKY, M
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GOMEZ, M
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A133 - A134
[26] EXISTENCE OF SURFACE-STATES ON AMORPHOUS AND CRYSTALLINE GERMANIUM
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LINDAU, I
GARNER, CM
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 363 - 363
[27] SURFACE-STATES IN P-DOPED AND B-DOPED AMORPHOUS HYDROGENATED SILICON
WAGNER, I
STASIEWSKI, H
ABELES, B
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[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7080 - 7086
[28] CALCULATIONS OF THE ELECTRONIC STATES OF HYDROGENATED AMORPHOUS-SILICON
TEMMERMAN, WM
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 260 - 261
[29] DENSITY OF STATES AND PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
DOMASHEVSKAYA, EP
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 135 - 138
[30] DETERMINATION OF SURFACE-STATES DISTRIBUTION IN AMORPHOUS SILICON USING MOS TUNNEL-JUNCTIONS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 709 - 709

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