SLOW SURFACE-STATES IN AMORPHOUS-SILICON

被引：0

作者：

BYKOV, AV ^{[1
]}

ZARIFYANTS, YA ^{[1
]}

RODINA, AA ^{[1
]}

UTKINEDIN, DP ^{[1
]}

机构：

[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1981年 / 04期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：117 / 118

页数：2

共 50 条

[1] SURFACE-STATES ON AMORPHOUS-SILICON
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[J]. SURFACE SCIENCE, 1995, 338 (1-3) : 117 - 124
[2] PHOTOTHERMAL DETECTION OF SURFACE-STATES IN AMORPHOUS-SILICON FILMS
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (05): : 503 - 507
[3] ABSENCE OF BAND-GAP SURFACE-STATES ON CLEAN AMORPHOUS-SILICON
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (02): : 273 - 282
[4] THE EFFECT OF SURFACE-STATES AND FIXED CHARGE ON THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3244 - 3248
[5] DENSITY OF BULK AND SURFACE-STATES AND STATIC CHARACTERISTICS OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 143 (01): : 157 - 167
[6] FAST AND SLOW STATES AT THE INTERFACE OF AMORPHOUS-SILICON AND SILICON-NITRIDE
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TSAI, CC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1672 - 1674
[7] SURFACE-STATES IN SILICON
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CHERNYSHOV, VN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1129 - 1132
[8] DEFECT STATES IN AMORPHOUS-SILICON
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 116 (01): : 91 - 100
[9] TUNNEL STATES IN AMORPHOUS-SILICON
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 41 - 44
[10] OBSERVATION OF SURFACE-STATES OF SILICON
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[J]. AMERICAN JOURNAL OF PHYSICS, 1988, 56 (10) : 947 - 948

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