DISTRIBUTED COUPLING OF AMPLIFIED SPONTANEOUS EMISSION OUT OF GAIN MEDIUM WITH RANDOM INHOMOGENEITIES

被引:0
|
作者
STARIKOV, FA
机构
来源
KVANTOVAYA ELEKTRONIKA | 1993年 / 20卷 / 05期
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamics of amplified spontaneous X-ray emission emerging from the end and lateral surface of a plasma active medium (AM) with random inhomogeneities has been studied. It is shown that radiation scattering on the dielectric permittivity fluctuations epsilon can be used for energy coupling out of AM lateral surface, maximum radiation flux being observed in the off-axis direction. In the presence of both regular refraction and scattering on epsilon, the distributed radiation coupling-out is conditioned by the effect, whose characteristic length (i.e. scattering or refraction length) is shorter.
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页码:477 / 481
页数:5
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