SYSTEM FOR CONTINUOUS MONITORING OF POINT-DEFECT CONCENTRATIONS DURING IRRADIATIONS AND ANNEALS

被引：0

|

作者：

JACKSON, JJ

RYAN, EA

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1979年 / 50卷 / 10期

关键词：

D O I：

10.1063/1.1135685

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：1193 / 1200

页数：8

相关论文

共 50 条

[1] DIRECT DETERMINATION OF POINT-DEFECT EQUILIBRIUM CONCENTRATIONS
ZIMMERMANN, H
RYSSEL, H
[J]. PHYSICAL REVIEW B, 1991, 44 (16): : 9064 - 9067
[2] POINT-DEFECT CONCENTRATIONS IN INGAASP QUATERNARY ALLOYS
ICHIMURA, M
WADA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 4140 - 4142
[3] POINT-DEFECT CLUSTERING DURING IRRADIATION
HALL, BO
[J]. JOURNAL OF NUCLEAR MATERIALS, 1980, 91 (01) : 63 - 72
[4] POINT-DEFECT DISLOCATION INTERACTIONS IN COPPER FOLLOWING PULSED NEUTRON AND ELECTRON IRRADIATIONS
PARKIN, DM
GOLDSTONE, JA
SIMPSON, HM
HEMSKY, JM
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1987, 17 (03): : 577 - 592
[5] EFFECT OF OXYGEN ACTIVITY ON POINT-DEFECT CONCENTRATIONS IN FORSTERITE
STOCKER, RL
[J]. TRANSACTIONS-AMERICAN GEOPHYSICAL UNION, 1976, 57 (04): : 323 - 323
[6] POINT-DEFECT GENERATION DURING SILICIDE FORMATION
ERLESAND, U
OSTLING, M
SVENSSON, BG
GAS, P
[J]. APPLIED SURFACE SCIENCE, 1991, 53 : 224 - 229
[7] POINT-DEFECT GENERATION DURING SILICON OXIDATION
DUNHAM, S
PLUMMER, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C317 - C317
[8] A NEW MODEL FOR THE DETERMINATION OF POINT-DEFECT EQUILIBRIUM CONCENTRATIONS IN SILICON
BUDIL, M
GUERRERO, E
BRABEC, T
SELBERHERR, S
POETZL, H
[J]. COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1987, 6 (01) : 37 - 44
[9] THE BEHAVIOR OF POINT-DEFECT TRAPS DURING PULSED IRRADIATION
BRAILSFORD, AD
[J]. JOURNAL OF NUCLEAR MATERIALS, 1986, 139 (03) : 163 - 178
[10] THE SOLID BODY AS A QUASI-CONTINUOUS THERMODYNAMIC SYSTEM .3. POINT-DEFECT THERMODYNAMICS
WEISS, K
[J]. ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-LEIPZIG, 1985, 266 (05): : 969 - 981

← 1 2 3 4 5 →