DENSITY OF STATES SPECTROSCOPY IN P-TYPE A-SI-H AND A-SIC-H

Using a closed torm expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials the p-layer DOS increases exponentially with energy above the Fermi level.