OPTICAL-PROPERTIES OF THE LAYERED TRANSITION-METAL-DICHALCOGENIDE RES2 - ANISOTROPY IN THE VAN-DER-WAALS PLANE

被引：83
|
作者：
FRIEMELT, K
LUXSTEINER, MC
BUCHER, E
机构：
[1] Universität Konstanz, Fakultat Physik, 78434 Konstanz
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 08期
关键词：
D O I：
10.1063/1.354268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spectral quantum efficiency in ReS2 heterodiodes was,measured in the wavelength region between 600 and 850 nm. Anisotropy effects in the van der Waals plane were observed by means of linearly polarized light at normal incidence to the (001) plane of ReS2 single crystals. The anisotropy in quantum efficiency reaches its maximum at lambda=627 nm and therefore, ReS2 devices are well suited for detecting the angle of polarization in experiments using a HeNe laser. At wavelengths above 750 nm the sign in polarization quantum efficiency changes due to various optical transitions.
引用
收藏
页码：5266 / 5268
页数：3
相关论文
共 50 条
  • [31] Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers
    Mei Zhao
    Wenting Zhang
    Manman Liu
    Chao Zou
    Keqin Yang
    Yun Yang
    Youqing Dong
    Lijie Zhang
    Shaoming Huang
    Nano Research, 2016, 9 : 3772 - 3780
  • [32] Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers
    Bellus, Matthew Z.
    Li, Ming
    Lane, Samuel D.
    Ceballos, Frank
    Cui, Qiannan
    Zeng, Xiao Cheng
    Zhao, Hui
    NANOSCALE HORIZONS, 2017, 2 (01) : 31 - 36
  • [33] OPTICAL-PROPERTIES OF LAYERED TRANSITION-METAL IODIDES
    POLLINI, I
    THOMAS, J
    LENSELINK, A
    PHYSICAL REVIEW B, 1984, 30 (04): : 2140 - 2148
  • [34] OPTICAL-PROPERTIES OF LAYERED TRANSITION-METAL HALIDES
    THOMAS, J
    JEZEQUEL, G
    POLLINI, I
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (24) : 5439 - 5453
  • [35] Tunable electronic properties of MoS2/ReS2 van der Waals heterostructure from first-principles study
    Luo, M.
    Xu, Y. E.
    Song, Y. X.
    OPTIK, 2017, 144 : 334 - 339
  • [36] MoS2 flake as a van der Waals homostructure: luminescence properties and optical anisotropy
    Kotova, Lyubov, V
    Rakhlin, Maxim, V
    Galimov, Aidar, I
    Eliseyev, Ilya A.
    Borodin, Bogdan R.
    Platonov, Alexey, V
    Kirilenko, Demid A.
    Poshakinskiy, Alexander, V
    Shubina, Tatiana, V
    NANOSCALE, 2021, 13 (41) : 17566 - 17575
  • [37] Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In2Se3/ReS2 van der Waals Heterostructure
    Ahmad, Waqas
    Rehman, Majeed Ur
    Younis, Umer
    Abbas, Aumber
    Kazmi, Jamal
    Al Suwaidi, Omar Husain
    Samad, Yarjan Abdul
    Lei, Wen
    Channa, Ali Imran
    Liang, Qijie
    Wang, Zhiming
    LASER & PHOTONICS REVIEWS, 2025, 19 (01)
  • [38] Harnessing in-plane optical anisotropy in WS2 through ReS2 crystal
    Kwon, Soyeong
    Yun, Tae Keun
    Ma, Peiwen J.
    Nam, Sungwoo
    NANOPHOTONICS, 2025,
  • [39] Charge quenching at defect states in transition metal dichalcogenide-graphene van der Waals heterobilayers
    Hernangomez-Perez, Daniel
    Donarini, Andrea
    Refaely-Abramson, Sivan
    PHYSICAL REVIEW B, 2023, 107 (07)
  • [40] Twistronics in two-dimensional transition metal dichalcogenide (TMD)-based van der Waals interface
    Gupta, Neelam
    Sachin, Saurav
    Kumari, Puja
    Rani, Shivani
    Ray, Soumya Jyoti
    RSC ADVANCES, 2024, 14 (05) : 2878 - 2888
12345