OPTICAL-PROPERTIES OF THE LAYERED TRANSITION-METAL-DICHALCOGENIDE RES2 - ANISOTROPY IN THE VAN-DER-WAALS PLANE

被引:83
|
作者
FRIEMELT, K
LUXSTEINER, MC
BUCHER, E
机构
[1] Universität Konstanz, Fakultat Physik, 78434 Konstanz
关键词
D O I
10.1063/1.354268
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spectral quantum efficiency in ReS2 heterodiodes was,measured in the wavelength region between 600 and 850 nm. Anisotropy effects in the van der Waals plane were observed by means of linearly polarized light at normal incidence to the (001) plane of ReS2 single crystals. The anisotropy in quantum efficiency reaches its maximum at lambda=627 nm and therefore, ReS2 devices are well suited for detecting the angle of polarization in experiments using a HeNe laser. At wavelengths above 750 nm the sign in polarization quantum efficiency changes due to various optical transitions.
引用
收藏
页码:5266 / 5268
页数:3
相关论文
共 50 条
  • [1] Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der waals plane
    Friemelt, K.
    Lux-Steiner, M.-Ch.
    Bucher, E.
    Journal of Applied Physics, 1993, 74 (08): : 5266 - 5268
  • [2] In-plane anisotropy of the optical and electrical properties of layered ReS2 crystals
    Ho, CH
    Huang, YS
    Tiong, KK
    Liao, PC
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (27) : 5367 - 5375
  • [3] Self-Anchored Van-Der-Waals Stacking Growth of Transition-Metal Dichalcogenide Nanoplates
    Jiang, Dingding
    Tang, Ya-Nan
    Wang, Di
    Xu, Xiangpeng
    Sun, Jiang
    Ma, Rong
    Li, Wenhao
    Han, Zhiya
    Liu, Yunqi
    Wei, Dacheng
    ADVANCED MATERIALS, 2024, 36 (39)
  • [4] In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals
    Ho, CH
    Huang, YS
    Tiong, KK
    JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 317 : 222 - 226
  • [5] Stacking Order Effects on the Electronic and Optical Properties of Graphene/Transition Metal Dichalcogenide Van der Waals Heterostructures
    Silveira, Julian F. R., V
    Besse, Rafael
    Da Silva, Juarez L. F.
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (04) : 1671 - 1680
  • [6] Vertical Transport in Graphene/Transition Metal Dichalcogenide van der Waals Heterostructure
    Moriya, Rai
    Sata, Yohta
    Yamaguchi, Takehiro
    Inoue, Yoshihisa
    Morikawa, Sei
    Masubuchi, Satoru
    Machida, Tomoki
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [7] Strain Modulation by van der Waals Coupling in Bilayer Transition Metal Dichalcogenide
    Zhao, Xiaoxu
    Ding, Zijing
    Chen, Jianyi
    Dan, Jiadong
    Poh, Sock Mui
    Fu, Wei
    Pennycook, Stephen J.
    Zhou, Wu
    Loh, Kian Ping
    ACS NANO, 2018, 12 (02) : 1940 - 1948
  • [8] Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2
    Cui, Qiannan
    Zhao, Hui
    ACS NANO, 2015, 9 (04) : 3935 - 3941
  • [9] Optical anisotropy of tungsten-doped ReS2 layered crystals
    Hsu, H. P.
    Lin, K. H.
    Huang, Y. S.
    OPTICAL MATERIALS, 2016, 62 : 433 - 437
  • [10] Second Harmonic Generation in van der Waals Heterostructure of Centrosymmetric ReS2 and Graphene
    Wang, Jing
    Zhang, Mingwen
    Han, Nannan
    Luo, Zheng-Dong
    Chen, Xiaoqing
    Liu, Yan
    Zhao, Jianlin
    Gan, Xuetao
    ADVANCED OPTICAL MATERIALS, 2023, 11 (10)