INFLUENCE OF THE TECHNOLOGY OF FORMATION OF A-SI-H ON RADIATIVE RECOMBINATION

被引：0
|
作者：
ATAEV, Z
VASILEV, VA
VOLKOV, AS
KONKOV, OI
TERUKOV, EI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：305 / 307
页数：3
相关论文
共 50 条
  • [31] ON THE ROLE OF THE DANGLING BOND AS A RADIATIVE CENTER IN A-SI-H
    DEPINNA, SP
    CAVENETT, BC
    AUSTIN, IG
    SEARLE, TM
    SOLID STATE COMMUNICATIONS, 1982, 41 (03) : 263 - 267
  • [32] DANGLING-BOND RECOMBINATION AND PHOTOCONDUCTIVITY OF A-SI-H
    KUROVA, IA
    ZVYAGIN, IP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 207 - 210
  • [33] COMMENT ON NONRADIATIVE-RECOMBINATION KINETICS IN A-SI-H
    DUNSTAN, DJ
    PHYSICAL REVIEW B, 1983, 28 (04): : 2252 - 2253
  • [34] SILICIDE FORMATION FOR CU ON A-SI-H
    TANG, XM
    WEBER, J
    BAER, Y
    FAVRE, M
    HELVETICA PHYSICA ACTA, 1989, 62 (2-3): : 235 - 238
  • [35] SPIN-DEPENDENT TRANSPORT AND RECOMBINATION IN A-SI-H
    LIPS, K
    FUHS, W
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 255 - 258
  • [36] SUBBAND OPTICAL-EXCITATION AND RECOMBINATION IN A-SI-H
    GU, SQ
    TAYLOR, PC
    RISTEIN, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 591 - 594
  • [37] LUMINESCENCE RECOMBINATION IN DOPED MAGNETRON SPUTTERED A-SI-H
    RHODES, AJ
    BHAT, PK
    SEARLE, TM
    AUSTIN, IG
    ALLISON, J
    JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) : 457 - 459
  • [38] RECOMBINATION AT DEFECTS IN AMORPHOUS-SILICON (A-SI-H)
    ULBER, I
    SALEH, R
    FUHS, W
    MELL, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 190 (1-2) : 9 - 20
  • [39] RECOMBINATION IN A-SI-H - TRANSITIONS THROUGH DEFECT STATES
    STREET, RA
    BIEGELSEN, DK
    WEISFIELD, RL
    PHYSICAL REVIEW B, 1984, 30 (10): : 5861 - 5870
  • [40] PHOTOCONDUCTIVITY AND RECOMBINATION DYNAMICS FOR A-SI-H AT DIFFERENT THICKNESSES
    YE, YGJ
    ANDERSON, WA
    SOLAR CELLS, 1988, 25 (02): : 169 - 179
12345