UNPINNED GAAS AND INP SCHOTTKY DIODES WITH AN EPITAXIAL SILICON INTERFACIAL LAYER

被引：0
|
作者：
COSTA, JC [1 ]
WILLIAMSON, F [1 ]
MILLER, TJ [1 ]
NATHAN, MI [1 ]
MUI, D [1 ]
STRITE, S [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 112期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：189 / 189
页数：1
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