ELECTROABSORPTION IN II-VI MULTIPLE QUANTUM-WELLS

被引：26

作者：

PARTOVI, A ^{[1
]}

GLASS, AM ^{[1
]}

OLSON, DH ^{[1
]}

FELDMAN, RD ^{[1
]}

AUSTIN, RF ^{[1
]}

LEE, D ^{[1
]}

JOHNSON, AM ^{[1
]}

MILLER, DAB ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first study of the room-temperature electroabsorption effects in CdZnTe/ZnTe multiple quantum well structures which exhibit sharp excitonic absorption peaks. The magnitude of the Franz Keldysh and quantum-confined Stark Effects are found to be comparable to those of III-V semiconductors. With optimized structures we expect II-VI semiconductors to be important components for information processing in the visible spectrum.

引用

页码：334 / 336

页数：3

共 50 条

[21] GAAS ALAS QUANTUM-WELLS FOR ELECTROABSORPTION MODULATORS
PEZESHKI, B
LORD, SM
HARRIS, JS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2645 - 2646
[22] EXCITONIC ELECTROABSORPTION IN EXTREMELY SHALLOW QUANTUM-WELLS
GOOSSEN, KW
CUNNINGHAM, JE
JAN, WY
APPLIED PHYSICS LETTERS, 1990, 57 (24) : 2582 - 2584
[23] GAAS/ALAS QUANTUM-WELLS FOR ELECTROABSORPTION MODULATORS
PEZESHKI, B
LORD, SM
BOYKIN, TB
HARRIS, JS
APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2779 - 2781
[24] Polar scattering rates in II-VI semiconductor quantum wells
Camacho, AS
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 220 (01): : 53 - 58
[25] Excitons and trions in II-VI quantum wells with modulation doping
Kochereshko, VP
Astakhov, GV
Yakovlev, DR
Ossau, W
Landwehr, G
Wojtowicz, T
Karczewski, G
Kossut, J
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2000, 221 (01): : 345 - 348
[26] Electron-phonon interaction in II-VI quantum wells
Maslov, A. Yu.
Proshina, O. V.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 13 (7-9): : 507 - 509
[27] Absorption and emission in n type II-VI quantum wells
Huard, V
Cox, RT
Saminadayar, K
Bourgognon, C
Arnoult, A
Cibert, J
Tatarenko, S
PHYSICA E, 2000, 6 (1-4): : 161 - 164
[28] Fine structure of excitons in II-VI quantum wells and dots
Puls, J
Henneberger, F
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 808 - 815
[29] Coherent control of excitonic excitations in II-VI quantum wells
Voss, T
Breunig, HG
Rückmann, I
Gutowski, J
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (04): : 813 - 818
[30] Defect related recombination processes in II-VI quantum wells
Godlewski, M
Bergman, JP
Monemar, B
Koziarska, B
Suchocki, A
Karczewski, G
Wojtowicz, T
Kossut, J
Waag, A
Hommel, D
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 455 - 459

← 1 2 3 4 5 →