BAND OFFSETS IN STRAINED INGAASP/INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES

被引：3
|
作者：
MARTIN, RW [1 ]
WONG, SL [1 ]
NICHOLAS, RJ [1 ]
SMITH, A [1 ]
GIBBON, MA [1 ]
THRUSH, EJ [1 ]
STAGG, JP [1 ]
机构：
[1] BNR EUROPE LTD,HARLOW CM17 9NA,ESSEX,ENGLAND
来源：
JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期
关键词：
D O I：
10.1051/jp4:1993567
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Magneto-absorption experiments on a range on In1-xGaxAsyP1-y/InGaAsP multi-quantum well (MQW) structures, including both tensile and compressive strained wells, are presented. Estimates for the band offsets are made in a lattice matched and a strain-balanced structure, and a model to predict the band offsets as a function of strain in InGaAsP heterostructures is described.
引用
收藏
页码：327 / 330
页数：4
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