EFFECT OF WELL/BARRIER RATIO ON THE PERFORMANCE OF STRAINED INGAAS/GAAS QUANTUM-WELL MODULATORS

被引：5
|
作者：
GHISONI, M
PARRY, G
HART, L
ROBERTS, C
MARINOPOULOU, A
STAVRINOU, PN
机构：
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[2] UNIV LONDON UNIV COLL,INTERDISCIPLINARY RES CTR SEMICOND MAT,DEPT ELECTR & ELECT ENGN,LONDON WC1E 7JE,ENGLAND
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 24期
关键词：
SEMICONDUCTOR QUANTUM WELLS; ELECTROABSORPTION MODULATORS;
D O I：
10.1049/el:19941379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the electroabsorption response of strained multiquantum well In0.2Ga0.8As/GaAs structures as a function of increasing barrier thickness. We find that a tradeoff exists between improved structural quality and reduced performance due to the increase in nonabsorbing material. However changing the barrier from 100 to, 200 Angstrom causes a 25% increase in the maximum absorption change and a significant lowering of the insertion loss.
引用
收藏
页码：2067 / 2069
页数：3
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