Effect of an Au Nanodot Nucleation Layer on CO Gas Sensing Properties of Nanostructured SnO2 Thin Films
被引:1
|
作者:
Le Hung, Nguyen
论文数: 0引用数: 0
h-index: 0
机构:
Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 305764, South Korea
Thai Nguyen Univ Educ, Dept Phys, Thai Nguyen, VietnamChungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 305764, South Korea
Le Hung, Nguyen
[1
,2
]
论文数: 引用数:
h-index:
机构:
Kim, Hyojin
[1
]
论文数: 引用数:
h-index:
机构:
Kim, Dojin
[1
]
机构:
[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 305764, South Korea
tin oxide;
nanostructured oxide;
gas sensor;
Au nanodot;
sputtering;
D O I:
10.3740/MRSK.2014.24.3.152
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We report the effect of the fabric of the surface microstructure on the CO gas sensing properties of SnO2 thin films deposited on self-assembled Au nanodots (SnO2/Au) that were formed on SiO2/Si substrates. We characterized structural and morphological properties, comparing them to those of SnO2 thin films deposited directly onto SiO2/Si substrates. We observed a significant enhancement of CO gas sensing properties in the SnO2/Au gas sensors, specifically exhibiting a high maximum response at 200 C-circle and quite a low detection limit of 1 ppm level in dry air. In particular, the response of the SnO2/Au gas sensor was found to reach the maximum value of 32.5 at 200 C-circle, which is roughly 27 times higher than the response (similar to 1.2) of the SnO2 gas sensor obtained at the same operating temperature of 200 C-circle. Furthermore, the SnO2/Au gas sensors displayed very fast response and recovery behaviors. The observed enhancement in the CO gas sensing properties of the SnO2/Au sensors is mainly ascribed to the formation of a nanostructured morphology in the active SnO2 layer having a high specific surface-reaction area by the insertion of a nanodot form of Au nucleation layer.
机构:
Kothamangalam Coll, Mar Athanasius Coll Autonomous, Res Ctr Phys, PO Kothamangalam, Kothamangalam 686666, Kerala, IndiaKothamangalam Coll, Mar Athanasius Coll Autonomous, Res Ctr Phys, PO Kothamangalam, Kothamangalam 686666, Kerala, India
Deepa, S.
George, Andrew Simon
论文数: 0引用数: 0
h-index: 0
机构:
Kothamangalam Coll, Mar Athanasius Coll Autonomous, Res Ctr Phys, PO Kothamangalam, Kothamangalam 686666, Kerala, IndiaKothamangalam Coll, Mar Athanasius Coll Autonomous, Res Ctr Phys, PO Kothamangalam, Kothamangalam 686666, Kerala, India
机构:
Gurukula Kangri Deemed Be Univ, Dept Phys, Semicond Res Lab, Haridwar, IndiaGurukula Kangri Deemed Be Univ, Dept Phys, Semicond Res Lab, Haridwar, India
Panday, Mohini
Upadhyay, Gaurav K.
论文数: 0引用数: 0
h-index: 0
机构:
Gurukula Kangri Deemed Be Univ, Dept Phys, Semicond Res Lab, Haridwar, IndiaGurukula Kangri Deemed Be Univ, Dept Phys, Semicond Res Lab, Haridwar, India
Upadhyay, Gaurav K.
Purohit, L. P.
论文数: 0引用数: 0
h-index: 0
机构:
Gurukula Kangri Deemed Be Univ, Dept Phys, Semicond Res Lab, Haridwar, IndiaGurukula Kangri Deemed Be Univ, Dept Phys, Semicond Res Lab, Haridwar, India
机构:
Semiconductor Research Lab, Department of Physics, Gurukula Kangri (Deemed to be University), Haridwar, IndiaSemiconductor Research Lab, Department of Physics, Gurukula Kangri (Deemed to be University), Haridwar, India
Panday, Mohini
Upadhyay, Gaurav K.
论文数: 0引用数: 0
h-index: 0
机构:
Semiconductor Research Lab, Department of Physics, Gurukula Kangri (Deemed to be University), Haridwar, IndiaSemiconductor Research Lab, Department of Physics, Gurukula Kangri (Deemed to be University), Haridwar, India
Upadhyay, Gaurav K.
Purohit, L.P.
论文数: 0引用数: 0
h-index: 0
机构:
Semiconductor Research Lab, Department of Physics, Gurukula Kangri (Deemed to be University), Haridwar, IndiaSemiconductor Research Lab, Department of Physics, Gurukula Kangri (Deemed to be University), Haridwar, India