LOCALIZATION OF CURRENT IN SILICON DIODES AT HIGH FORWARD-CURRENT DENSITIES

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作者：

BURTSEV, EF

GREKHOV, IV

KRYUKOVA, NN

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 10期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1675 / &

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