SPACE-CHARGE LAYER CAPACITANCE AND OFFSET VOLTAGE OF AN EXPONENTIAL-CONSTANT P-N-JUNCTION

被引:1
|
作者
HO, FD
机构
[1] Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, AL
关键词
D O I
10.1080/00207219108921282
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is important to study an exponential-constant p-n junction because it gives a realistic approximation for many diffused p-n junction profiles. To calculate the space-charge layer capacitance for this junction we use an abrupt space-charge edge approximation with a correction which includes the effect of the mobile carriers at the edges of the space-charge region. In this approach the offset voltage V(off) is used in place of the built-in potential as obtained from the depletion approximation. An analytical model for the space-charge region capacitance for an exponential-constant junction is developed. This model holds well for zero bias, for small forward voltages, and for reverse voltages. It shows good agreement when compared with the Chawla-Gummel model. It is simple and gives a direct relationship between the depletion capacitance and the applied voltage.
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页码:327 / 342
页数:16
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