CRYSTALLOGRAPHIC PROPERTIES OF AS GROWN CDXHG1-XTE EPITAXIAL LAYERS DEPOSITED BY CATHODIC SPUTTERING

被引：14
|
作者：
ROUSSILLE, R
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 01期
关键词：
D O I：
10.1016/0022-0248(82)90017-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：101 / 107
页数：7
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