HIGH-POWER, RELIABLE 645-NM COMPRESSIVELY STRAINED GAINP/GAALINP LASER-DIODES

被引：5

作者：

OU, SS ^{[1
]}

YANG, JJ ^{[1
]}

JANSEN, M ^{[1
]}

HESS, C ^{[1
]}

HAYASHIDA, P ^{[1
]}

TU, C ^{[1
]}

ALVAREZ, F ^{[1
]}

机构：

[1] TRW CO INC,SPACE & ELECT GRP,REDONDO BEACH,CA 90278

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 16期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS; RELIABILITY;

D O I：

10.1049/el:19940904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CW output powers in excess of 1 W and reliable CW output powers of 250mW at room temperature from double quantum well compressively strained GaInP/GaAlInP laser diodes with an emission wavelength of 645nm were demonstrated. An anomalous dependence of threshold current density and wavelength on GaInP/GaAlInP laser diode stripe width was characterised.

引用

页码：1303 / 1305

页数：3

共 50 条

[1] HIGH-POWER 630-640 NM GAINP/GAALINP LASER-DIODES
OU, SS
YANG, JJ
FU, RJ
HWANG, CJ
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (08) : 892 - 894
[2] 635 NM GAINP/GAALINP SURFACE-EMITTING LASER-DIODES
OU, SS
YANG, JJ
JANSEN, M
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (24) : 3262 - 3264
[3] HIGH-POWER LASER-DIODES
VOLLUET, G
GROUSSIN, B
FILLARDET, T
CARRIERE, C
PARENT, A
[J]. JOURNAL DE PHYSIQUE III, 1992, 2 (09): : 1713 - 1726
[4] RELIABLE HIGH-POWER OPERATION OF INGAALP VISIBLE-LIGHT LASER-DIODES WITH STRAINED ACTIVE LAYER
NITTA, K
ITAYA, K
NISHIKAWA, Y
ISHIKAWA, M
OKAJIMA, M
HATAKOSHI, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3862 - 3864
[5] HIGH-POWER ULTRAFAST LASER-DIODES
DELFYETT, PJ
FLOREZ, LT
STOFFEL, N
GMITTER, T
ANDREADAKIS, NC
SILBERBERG, Y
HERITAGE, JP
ALPHONSE, GA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) : 2203 - 2219
[6] HIGH-POWER OPERATION OF 830-NM ALGAAS LASER-DIODES
SHINOZAKI, K
WATANABE, A
FURUKAWA, R
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 2907 - 2911
[7] HIGH-POWER CONTINUOUS OPERATION OF LASER-DIODES AT 1064NM
MURISON, RF
MOORE, AH
LEE, SR
HOLEHOUSE, N
DZURKO, KM
COCKERILL, TM
COLEMAN, JJ
[J]. ELECTRONICS LETTERS, 1991, 27 (21) : 1979 - 1981
[8] 650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer
XIA Wei~1
[J]. Optoelectronics Letters, 2006, (04) : 263 - 265
[9] 650 nm GaInP/AIGaInP laser diodes with low threshold and compressively strained MQW active layer
Xia Wei
Li Shu-qiang
Wang Ling
Ma De-ying
Zhang Xin
Wang Fu-xun
Ji Gang
Liu Ding-wen
Zhong-xiang, Ren
Xu Xian-gang
Mei Liang-mo
[J]. OPTOELECTRONICS LETTERS, 2006, 2 (04) : 263 - 265
[10] HIGH-POWER, LOW THRESHOLD, SINGLEMODE 630NM LASER-DIODES
GEELS, RS
WELCH, DF
SCRIFRES, DR
BOUR, DP
TREAT, DW
BRINGANS, RD
[J]. ELECTRONICS LETTERS, 1992, 28 (19) : 1810 - 1811

← 1 2 3 4 5 →