共 50 条
- [1] ELECTRONIC-STRUCTURE OF (110) GE-GAAS SUPER-LATTICES AND INTERFACES PHYSICAL REVIEW B, 1978, 17 (02): : 672 - 674
- [2] ELECTRONIC-STRUCTURE OF THE GE-GAAS AND GE-ZNSE (100) INTERFACES PHYSICAL REVIEW B, 1980, 21 (02): : 709 - 722
- [3] ELECTRONIC-STRUCTURE OF THE GE-ZNSE, GE-GAAS, AND GE-ALAS(110) INTERFACES AND SUPERLATTICES PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 148 (02): : 549 - 558
- [4] THE ELECTRONIC-STRUCTURE OF GE-GAAS(110) INTERFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 498 - 506
- [5] THEORETICAL TRENDS IN ABRUPT (110) ALAS-GAAS, GE-GAAS, AND GE-ZNSE INTERFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1437 - 1443
- [6] ELECTRONIC-PROPERTIES OF RECONSTRUCTED GE-GAAS SUPER-LATTICES AND INTERFACES BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 304 - 304
- [8] ELECTRONIC-STRUCTURE OF HOMOPOLAR-HETROPOLAR SEMICONDUCTOR HETROJUNCTIONS AND SUPER-LATTICES - GE-GAAS (110) AND SI-GAP (110) SYSTEMS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 303 - 303
- [10] MOLECULAR-BEAM EPITAXY OF GE-GAAS SUPER-LATTICES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 567 - 570