COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS

被引：91
|
作者：
MA, TP [1 ]
SCOGGAN, G [1 ]
LEONE, R [1 ]
机构：
[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
来源：
APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 02期
关键词：
D O I：
10.1063/1.88366
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：61 / 63
页数：3
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