DOPING AND TEMPERATURE-INDUCED PHASE-TRANSITIONS IN C60

被引：2

作者：

MATUS, M ^{[1
]}

KUZMANY, H ^{[1
]}

PICHLER, T ^{[1
]}

HALUSKA, M ^{[1
]}

WINTER, H ^{[1
]}

机构：

[1] LUDWIG BOLTZMANN INST FESTKORPERPHYS,A-1090 VIENNA,AUSTRIA

来源：

SYNTHETIC METALS | 1993年 / 56卷 / 2-3期

关键词：

D O I：

10.1016/0379-6779(93)90088-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the temperature and doping induced phase transition of C60 using Raman and IR spectroscopy. In the single crystalline undoped material we found crystal field splitting of the internal Raman modes but no evidence for a line shift near the phase transition. In the potassium doped C60 a new stoichiometric composition of the form KxC60 with x = 1 was observed at elevated temperatures. In addition the ungerade and the gerade modes were found to be strongly influenced by various types of electron-phonon couplings.

引用

页码：3110 / 3118

页数：9

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