CHARACTERISTICS OF THE PHOTOCONDUCTIVITY OF RHODIUM-DOPED SILICON AT 4.2-DEGREES-K

被引：0

作者：

MAMADALIMOV, AT

KHABIBULLAEV, PK

USMANOV, TA

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来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 07期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：737 / 739

页数：3

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