CHARACTERISTICS OF THE PHOTOCONDUCTIVITY OF RHODIUM-DOPED SILICON AT 4.2-DEGREES-K

被引：0

作者：

MAMADALIMOV, AT

KHABIBULLAEV, PK

USMANOV, TA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 07期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：737 / 739

页数：3

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[1] CHARACTERISTICS OF THE PHOTOCONDUCTIVITY OF RHODIUM-DOPED SILICON AT 4. 2 degree K.
Mamadalimov, A.T.
Khabibullaev, P.K.
Usmanov, T.A.
Soviet physics. Semiconductors, 1981, 15 (07): : 737 - 739
[2] DUCTILITY OF IRON AT 4.2-DEGREES-K
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ACTA METALLURGICA, 1957, 5 (12): : 763 - 764
[3] ON THE DUCTILITY OF IRON AT 4.2-DEGREES-K
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[4] ON THE DUCTILITY OF IRON AT 4.2-DEGREES-K
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[5] FREE ROTATION IN SOLIDS AT 4.2-DEGREES-K
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[6] NEGATIVE RESISTANCE OF SILICON P-N JUNCTIONS AT 4.2-DEGREES-K
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[7] FURTHER CONSIDERATIONS ON THE DUCTILITY OF IRON AT 4.2-DEGREES-K
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[9] HEAT CAPACITY OF PALLADIUM BELOW 4.2-DEGREES-K
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[10] LATTICE-DYNAMICS OF CUCL AT 4.2-DEGREES-K
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