ELECTRONIC BAND-STRUCTURE OF SUPERLATTICES UNDER A UNIFORM ELECTRIC-FIELD AND WANNIER-STARK EFFECT

被引：20
|
作者：
MORIFUJI, M [1 ]
NISHIKAWA, Y [1 ]
HAMAGUCHI, C [1 ]
FUJII, T [1 ]
机构：
[1] FUJITSU LABS LTD,ATSUGI,KANAGAWA 24301,JAPAN
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 08期
关键词：
D O I：
10.1088/0268-1242/7/8/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic band structures of GaAs/(GaAl)As superlattices under a uniform electric field along the growth axis are calculated on the basis of a microscopic tight-binding (TB) description. Finite sets of quantum wells are considered in order to apply the TB method to a system without translational symmetry. The main effect of the electric field appears as diagonal elements of the TB matrix, resulting in modulation of miniband dispersion and localization of wavefunctions (Wannier-Stark effect). The calculated results are found to be in good agreement with the experimental observation by electroreflectance measurements.
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收藏
页码：1047 / 1051
页数：5
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