ELECTRONIC BAND-STRUCTURE OF SUPERLATTICES UNDER A UNIFORM ELECTRIC-FIELD AND WANNIER-STARK EFFECT

被引：20

作者：

MORIFUJI, M ^{[1
]}

NISHIKAWA, Y ^{[1
]}

HAMAGUCHI, C ^{[1
]}

FUJII, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI,KANAGAWA 24301,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 08期

关键词：

D O I：

10.1088/0268-1242/7/8/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic band structures of GaAs/(GaAl)As superlattices under a uniform electric field along the growth axis are calculated on the basis of a microscopic tight-binding (TB) description. Finite sets of quantum wells are considered in order to apply the TB method to a system without translational symmetry. The main effect of the electric field appears as diagonal elements of the TB matrix, resulting in modulation of miniband dispersion and localization of wavefunctions (Wannier-Stark effect). The calculated results are found to be in good agreement with the experimental observation by electroreflectance measurements.

引用

页码：1047 / 1051

页数：5

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