PHASE COHERENT LENGTH MEASUREMENTS IN SINGLE-CRYSTAL NISI2 FILMS

被引:6
|
作者
MATSUI, M [1 ]
OHSHIMA, T [1 ]
KOMORI, F [1 ]
KOBAYASHI, S [1 ]
机构
[1] UNIV TOKYO,DEPT PHYS,TOKYO 113,JAPAN
关键词
D O I
10.1063/1.345158
中图分类号
O59 [应用物理学];
学科分类号
摘要
The phase coherent length lφ of conduction electrons in single-crystal NiSi2 films has been measured using weak localization phenomena. Logarithmic temperature dependence and logarithmic magnetic-field dependence of the conductivity observed in epitaxially grown NiSi2 single-crystal films with thicknesses from 6 to 40 nm are interpreted in terms of the two-dimensional weak localization with strong spin-orbit interaction. Considerably long-phase coherent lengths are obtained by fitting analyses using magnetoconductance data; lφ=0.8 μm at 4.2 K and 1.5 μm at 2 K. This is due to a very low concentration of magnetic scatterers in NiSi 2. Because of its long-phase coherent length, the single-crystal NiSi2 film can be applied to novel quantum interference devices.
引用
收藏
页码:6368 / 6374
页数:7
相关论文
共 50 条
  • [2] GROWTH OF SINGLE-CRYSTAL NISI2 LAYERS ON SI (110)
    TUNG, RT
    NAKAHARA, S
    BOONE, T
    APPLIED PHYSICS LETTERS, 1985, 46 (09) : 895 - 897
  • [3] SINGLE-CRYSTAL SI/NISI2/SI(100) STRUCTURES
    TUNG, RT
    EAGLESHAM, DJ
    SCHREY, F
    SULLIVAN, JP
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8250 - 8257
  • [4] GROWTH OF ULTRATHIN SINGLE-CRYSTAL NISI2 LAYERS ON SI(111)
    TUNG, RT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1840 - 1844
  • [5] GROWTH OF THIN SINGLE-CRYSTAL NISI2 FILMS ON SI SURFACES, A FIELD-ION MICROSCOPE STUDY
    LIU, HF
    LIU, HM
    TSONG, TT
    APPLIED PHYSICS LETTERS, 1985, 47 (05) : 524 - 526
  • [6] GROWTH OF THIN SINGLE-CRYSTAL NISI2 FILMS OF SI SURFACES, A FIELD-ION MICROSCOPE STUDY
    LIU, HF
    LIU, HM
    TSONG, TT
    JOURNAL DE PHYSIQUE, 1986, 47 (C-2): : 315 - 319
  • [7] TRANSPORT STUDIES IN SINGLE-CRYSTAL FILMS OF COSI2 AND NISI2 - A NEW CLASS OF QUASI-2-DIMENSIONAL METALS
    HENSEL, JC
    TUNG, RT
    POATE, JM
    UNTERWALD, FC
    SURFACE SCIENCE, 1984, 142 (1-3) : 37 - 42
  • [8] Effect of the crystallographic orientation of the surface of single-crystal Si wafers on the endotaxial growth of NiSi2 nanoplates
    Schuitek, Thiago Paulino
    da Silva Costa, Daniel
    Pereira Mattoso Filho, Ney
    Kellermann, Guinther
    Journal of Applied Crystallography, 2024, 57 : 1426 - 1435
  • [9] Kinetics of agglomeration of NiSi and NiSi2 phase formation
    Detavernier, C
    Özcan, A
    Lavoie, C
    Sweet, JJ
    Harper, JME
    NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 2003, 745 : 135 - 140
  • [10] Effect of the crystallographic orientation of the surface of single-crystal Si wafers on the endotaxial growth of NiSi2 nanoplates
    Schuitek, Thiago Paulino
    Costa, Daniel da Silva
    Mattoso Filho, Ney Pereira
    Kellermann, Guinther
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2024, 57 : 1426 - 1435