MULTIPLE-STATE RESONANT-TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE AND ITS APPLICATION AS A FREQUENCY-MULTIPLIER

被引：39

|

作者：

SEN, S

CAPASSO, F

CHO, AY

SIVCO, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：533 / 535

页数：3

相关论文

共 9 条

[1] Multiple-state resonant-tunneling bipolar transistor operating at room temperature and its application as a frequency multiplier
Sen, Susanta
Capasso, Federico
Cho, Alfred Y.
Sivco, Deborah L.
Electron device letters, 1988, 9 (10): : 533 - 535
[2] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE
CAPASSO, F
SEN, S
GOSSARD, AC
HUTCHINSON, AL
ENGLISH, JH
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576
[3] ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS
SEABAUGH, AC
TADDIKEN, AH
BEAM, EA
RANDALL, JN
KAO, YC
NEWELL, B
ELECTRONICS LETTERS, 1993, 29 (20) : 1802 - 1803
[4] OBSERVATION OF RESONANT-TUNNELING AT ROOM-TEMPERATURE IN GAINP/GAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR
LIU, W
SEABAUGH, AC
HENDERSON, TS
YUKSEL, A
BEAM, EA
FAN, SK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1384 - 1389
[5] MICROWAVE MULTIPLE-STATE RESONANT-TUNNELING BIPOLAR-TRANSISTORS
LUNARDI, LM
SEN, S
CAPASSO, F
SMITH, PR
SIVCO, DL
CHO, AY
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 219 - 221
[6] NOVEL RESONANT-TUNNELING TRANSISTOR WITH HIGH TRANSCONDUCTANCE AT ROOM-TEMPERATURE
PEATMAN, WCB
BROWN, ER
ROOKS, MJ
MAKI, P
GRIMM, WJ
SHUR, M
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (07) : 236 - 238
[7] Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature
Tsai, JH
APPLIED PHYSICS LETTERS, 2003, 83 (13) : 2695 - 2697
[8] ROOM-TEMPERATURE OPERATION OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR BASED INTEGRATED-CIRCUIT
MOISE, TS
SEABAUGH, AC
BEAM, EA
RANDALL, JN
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (09) : 441 - 443
[9] NEW RESONANT-TUNNELING DEVICES WITH MULTIPLE NEGATIVE-RESISTANCE REGIONS AND HIGH ROOM-TEMPERATURE PEAK-TO-VALLEY RATIO
SEN, S
CAPASSO, F
SIVCO, D
CHO, AY
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 402 - 404