LOW-ENERGY FLOPPY MODES IN HIGH-TEMPERATURE CERAMICS

被引：50

作者：

VASHISHTA, P

KALIA, RK

EBBSJO, I

机构：

[1] LOUISIANA STATE UNIV,DEPT COMP SCI,BATON ROUGE,LA 70803

[2] UNIV UPPSALA,STUDSVIK NEUTRON RES LAB,S-61182 NYKOPING,SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.75.858

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Enhancement of the phonon density of states due to low-energy floppy modes in crystalline and glassy states of the high-temperature ceramic Si3N4 is investigated using the molecular-dynamics method. Floppy modes appear continuously in the glass as the connectivity of the system is reduced. In the crystal, they appear suddenly at 20% volume expansion. The density of states due to the floppy modes varies linearly with energy, and the specific heat is significantly enhanced by the floppy modes.

引用

页码：858 / 861

页数：4

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