PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS

被引：7
|
作者：
HU, TD
XIE, YN
QIAO, S
HAI, Y
JIN, YL
XIAN, DC
机构：
[1] Synchrotron Radiation Laboratory, Institute of High Energy Physics, Academia Sinica, Beijing
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.50.2216
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoconduction spectra of GaAs samples at photon energies around the Ga and As K edges were measured. Extended x-ray-absorption fine-structure oscillation was observed in these spectra. It is found that the spectrum shape of the photocurrent depends on the sample thickness. A microscopic theory is presented to determine the photoconduction response to x-ray absorption. The theory is in good agreement with experiment.
引用
收藏
页码：2216 / 2220
页数：5
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