STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF SIPOS PASSIVATION LAYERS

被引：6
|
作者：
FUSSEL, W
HENRION, W
SCHOLZ, R
机构：
[1] Max-Planck-Institut für Mikrostrukturphysik Halle, Halle, Germany 0345-601512, Weinberg 2
来源：
MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(93)90186-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structure of SIPOS layers depends on the oxygen content and the thermal treatment. As-deposited layers are predominantly amorphous and show instabilities in their electrical properties. We investigated changes in the structure, the conductivity and the optical reflectance dependant on the temperature of a subsequent annealing treatment.
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页码：355 / 358
页数：4
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