INVESTIGATION OF THE DIFFUSION LENGTH IN VARIABLE-GAP ALXGA1-XAS SOLID-SOLUTIONS

被引：0
|
作者：
KESAMANLY, FP
KOVALENKO, VF
MARONCHUK, IE
PEKA, GP
SHEPEL, LG
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：780 / 782
页数：3
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF VARIABLE-GAP ALXGA1-XAS SOLID-SOLUTIONS
    KOVALENKO, VF
    MARONCHUK, IE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 887 - 888
  • [2] INVESTIGATION OF THE DIFFUSION LENGTH IN VARIABLE-GAP AlxGa1 - xAs SOLID SOLUTIONS.
    Kesamanly, F.P.
    Kovalenko, V.F.
    Maronchuk, I.E.
    Peka, G.P.
    Shepel', L.G.
    1978, 12 (07): : 780 - 782
  • [3] PHOTOSENSITIVITY OF LONG DIODE STRUCTURES MADE OF VARIABLE-GAP ALXGA1-XAS SOLID-SOLUTIONS
    PEKA, GP
    PULEMETOV, DA
    RADZIVILYUK, VA
    SMOLYAR, AN
    SHIMULITE, EA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 93 - 94
  • [4] INVESTIGATION OF THE CATHODOLUMINESCENCE OF VARIABLE-COMPOSITION ALXGA1-XAS SOLID-SOLUTIONS
    DRYAPIKO, NK
    PEKA, GP
    CHUMAK, SM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1284 - 1286
  • [5] PRESSURE SENSORS BASED ON VARIABLE-GAP ALXGA1-XAS
    BARTASHEVICH, ZN
    KAVALYAUSKAS, AA
    SHIMULITE, EA
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1977, 20 (05) : 1479 - 1481
  • [6] MICRO-CATHODOLUMINESCENCE INVESTIGATION OF HETEROJUNCTIONS IN ALXGA1-XAS SOLID-SOLUTIONS
    GIMELFARB, FA
    GOVORKOV, AV
    FISTUL, VI
    SHLENSKII, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 36 - 38
  • [7] CHARACTERISTICS OF THE BEHAVIOR OF DEEP IMPURITY CENTERS AND IMPURITY PHOTO-LUMINESCENCE OF VARIABLE-GAP CHROMIUM-DOPED ALXGA1-XAS SOLID-SOLUTIONS
    GORSHKOV, LI
    KOVALENKO, VF
    PEKA, GP
    SHEPEL, LG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 312 - 315
  • [8] STUDY OF ZINC DIFFUSION FROM GAS PHASES IN ALXGA1-XAS SOLID-SOLUTIONS
    ANDREEV, VM
    SULIMA, OV
    ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (07): : 1320 - 1324
  • [9] ABSORPTION-EDGE OF ALXGA1-XAS VARIABLE-GAP EPITAXIAL-FILMS
    ZEMBATOV, KB
    KRAVCHENKO, AF
    MASHUKOV, YP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 868 - 870
  • [10] INFLUENCE OF NEUTRON-IRRADIATION ON THE PHOTOLUMINESCENCE OF VARIABLE-GAP ALXGA1-XAS STRUCTURES
    KOVALENKO, VF
    PEKA, GP
    TOKALIN, OA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 626 - 628
12345