PROPERTIES OF LASER-ASSISTED DOPING IN SILICON

被引：41
|
作者：
AFFOLTER, K
LUTHY, W
VONALLMEN, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 02期
关键词：
D O I：
10.1063/1.90302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：185 / 187
页数：3
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