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- [1] INFLUENCE OF THE LASER IR RADIATION ON THE TRANSFORMATION OF THE INTRINSIC AND IMPURITY DEFECTS IN THE NARROW-GAP PB1-XSNXTE(SE) UKRAINSKII FIZICHESKII ZHURNAL, 1988, 33 (05): : 744 - 748
- [2] SPIN SPLITTING IN NARROW-GAP SEMICONDUCTORS PB1-XSNXTE IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (08): : 78 - 83
- [6] WEAK FIELD HALL-EFFECT AND RESISTIVITY IN NARROW-GAP PB1-XSNXTE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 435 - 435
- [7] Probing of Local Electron States in Pb1-xSnxTe(In) Narrow-Gap Semiconductors Using Laser Terahertz Radiation 2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2013,
- [8] Photoconductivity of Pb1-XSnXTe(In) Narrow-Gap Semiconductors with Variable Composition and Microstructure in the Terahertz Range 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
- [9] THE PROPERTIES OF THE BAND SPECTRUM PARAMETERS IN THE BAND-INVERSION REGION OF NARROW-GAP PB1-XSNXTE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 135 (02): : 587 - 596
- [10] PERMITTIVITY AND SOFT MODES OF NARROW-GAP PB1-XSNXTE(X LESS-THAN 0.35) SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 374 - 377