ION-IMPLANTATION AND RAPID THERMAL ANNEALING OF AU-CDXHG1-XTE STRUCTURES

The effects of Ar+ and P+ ion implantation at E = 50-200 keV and post-implantation rapid thermal annealing (RTA) at T = 100-300-degrees-C during 10 s on Au-CdxHg1-xTe structures (x = 0.20-0.225) were investigated. A substantial increase of open circuit voltages (OCV) of photo-voltaic effects (PVE) of Au-p-CMT structures and a decrease of the resistance of implanted structures independently of the conduction type were found. It was shown that ion implantation resulted in the formation of n-p and n+-n junctions on the open surface of CMT and under the contacts at high enough ion energy. The origin of n-layers was connected with point radiation defects. These defects were annealed by RTA at a temperature of 200-degrees-C. A decrease of the negative OCV, the appearance and increase of a positive OCV and also a plot of current-voltage characteristics at 270-degrees-C RTA for Au-n-CMT confirmed the formation of a p-layer near the surface and under the Au contact. The origin of the p-layer was not connected with activation of phosphorus and defined by mercury vacancies.