Environmental effects on Cu/SiO2 and Cu/Ti/SiO2 thin film adhesion

被引：2
|
作者：
Tymiak, NI [1 ]
Li, M [1 ]
Volinsky, AA [1 ]
Katz, Y [1 ]
Gerberich, WW [1 ]
机构：
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
来源：
MATERIALS RELIABILITY IN MICROELECTRONICS IX | 1999年 / 563卷
关键词：
D O I：
10.1557/PROC-563-269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For several microelectronics applications, Cu/dielectric adhesion is a key reliability issue. Either electroplating or local galvanic coupling under moist operating conditions may result in hydrogen induced interface weakening. The present study compared hydrogen effects on Cu/SiO2 adhesion for sputter deposited films with and without Ti underlayers. Thin Cu and Cu/Ti films ranging from 80-3000 nm have been evaluated. Direct observations of the surface during electrolytic charging have shown no evidence of film/substrate debonding for Cu/Ti systems. In contrast, extensive delaminations have been observed for Cu films. Indentation testing immediately after charging indicated up to 100% decrease in the practical adhesion for Ti/Cu films. The observed effect resulted from a true interfacial fracture energy reduction from 4 to 2 J/m(2). Plastic energy dissipation was assumed unaffected as no yield stress changes were detected after charging. Even with the deleterious effect of hydrogen, adhesion strength of Cu/Ti films remained higher than that of non-charged Cu films.
引用
收藏
页码：269 / 274
页数：6
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