PHOTO-ELECTROCHEMICAL ETCHING AND DEFECT CHARACTERIZATION OF SEMI-INSULATING GAAS

被引：0
|
作者：
OTSUBO, M
MITSUI, Y
NAKATANI, M
SHIRAHATA, K
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：401 / 406
页数：6
相关论文
共 50 条
  • [1] CHARACTERIZATION OF DEEP LEVELS IN SEMI-INSULATING GAAS CRYSTALS BY A SPECTROSCOPIC PHOTO-ELECTROCHEMICAL CURRENT
    OTSUBO, M
    MUROTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L345 - L347
  • [2] ETCHING CHARACTERIZATION OF (001) SEMI-INSULATING GAAS WAFERS
    OKADA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (03): : 413 - 417
  • [3] MAGNETOPHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS AS A FUNCTION OF ETCHING TIME
    EFTAXIAS, CA
    EUTHYMIOU, PC
    NOMICOS, CD
    SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 629 - 631
  • [4] Dry etching of semi-insulating GaAs for devices fabrication
    Pal, S
    Mudholkar, M
    Dubey, GC
    Singh, RA
    Purohit, RK
    SEMICONDUCTOR DEVICES, 1996, 2733 : 478 - 480
  • [5] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
    TAJIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L227 - L229
  • [6] CHARACTERIZATION OF SEMI-INSULATING GAAS SUBSTRATES FOR GAAS ICS
    NANISHI, Y
    ISHIDA, S
    MIYAZAWA, S
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1985, 33 (01): : 136 - 145
  • [7] Depolarization current by a dipolar defect in semi-insulating GaAs
    Kim, HM
    Kim, JJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (2A): : 450 - 451
  • [8] Depolarization current by a dipolar defect in semi-insulating GaAs
    Kim, Hwa-Min
    Kim, Jong-Jae
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (2 A): : 450 - 451
  • [9] SEMI-INSULATING GAAS
    HRIVNAK, L
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 436 - 444
  • [10] Characterization of semi-insulating GaAs for detector application
    Rogalla, M
    Chen, JW
    Geppert, R
    Kienzle, M
    Irsigler, R
    Ludwig, J
    Runge, K
    Fiederle, M
    Benz, KW
    Schmid, TH
    daVia, C
    Lauxtermann, S
    Liu, X
    Krueger, J
    Weber, ER
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2): : 14 - 17
12345