ANISOTROPIC CRYSTAL ETCHING - A SIMULATION PROGRAM

被引:27
|
作者
DANEL, JS
DELAPIERRE, G
机构
[1] LETI, DOPT/SCMM-CEA-CENG 85X
关键词
D O I
10.1016/0924-4247(92)80115-J
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the field of micro-devices, tools are actually needed to model the fabrication processes, especially the shapes resulting from chemical etching of a monocrystal. This paper presents some results concerning the prediction of geometrical shapes obtained by this technique. The basic principles of a simulation program under development and some preliminary results are displayed.
引用
收藏
页码:267 / 274
页数:8
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