AN ION-SOURCE FOR INDIUM AND GALLIUM

被引：4
|
作者：
NIKKINEN, L [1 ]
PATHAK, BP [1 ]
LESSARD, L [1 ]
LEE, JKP [1 ]
机构：
[1] MCGILL UNIV,FOSTER RADIAT LAB,MONTREAL H3C 3G1,QUEBEC,CANADA
来源：
NUCLEAR INSTRUMENTS & METHODS | 1980年 / 175卷 / 2-3期
关键词：
D O I：
10.1016/0029-554X(80)90756-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An ion source based on the surface ionization principle was developed. The performance was studied by varying the temperature of the ionizing surface at various temperatures of the oven. An anamolously strong ionization of In and Ga fission fragments was observed at low (approximately 1000 degree C) ionizing surface temperatures. The ion source is being used in the study of fission induced by charged particle beams, and for producing radioactive sources for spectroscopic studies.
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页码：425 / 429
页数：5
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