FIRST PRINCIPLES CALCULATIONS OF INTERFACE PHONONS OF AN EPITAXIAL SB MONOLAYER ON GAAS(110) AND INP(110)

被引：14
|
作者：
SCHMIDT, WG [1 ]
SRIVASTAVA, GP [1 ]
机构：
[1] FRIEDRICH SCHILLER UNIV JENA, INST FESTKORPERTHEORIE & THEORET OPT, D-07743 JENA, GERMANY
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 04期
关键词：
D O I：
10.1016/0038-1098(94)90597-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Vibrations of an epitaxial layer of Sb on the (110) surface of GaAs and InP have been investigated using first principles pseudopotential calculations. The Hellmann-Feynman forces were employed to calculate the dynamical matrix at the Gamma-point. The resulting eigenvalues and eigenmodes are discussed in the context of recent Raman scattering experiments and tight-binding results.
引用
收藏
页码：345 / 348
页数：4
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