SIMULATION OF SILICON CLUSTERS AND SURFACES VIA TIGHT-BINDING MOLECULAR-DYNAMICS

被引：83

作者：

KHAN, FS

BROUGHTON, JQ

机构：

[1] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973

[2] USN,RES LAB,DIV CONDENSED MATTER & RADIAT,CONDENSED MATTER PHYS BRANCH,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.39.3688

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3688 / 3700

页数：13

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