GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS/INXGA1-XAS STRAINED-LAYER SUPERLATTICES

被引：6
|
作者：
KOHL, A
JUILLAGUET, S
FRAISSE, B
SCHWEDLER, R
ROYO, F
PEYRE, H
BRUGGEMAN, F
WOLTER, K
LEO, K
KURZ, H
CAMASSEL, J
机构：
[1] USTL,GES,F-34095 MONTPELLIER 05,FRANCE
[2] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR 1&2,W-5100 AACHEN,GERMANY
[3] UNIV MONTPELLIER 2,CNRS,LAMMI,F-34095 MONTPELLIER 05,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期
关键词：
D O I：
10.1016/0921-5107(93)90358-T
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Since the early proposal that InGaAs/InGaAs strained-layer superlattices (SLSs) should constitute a new class of optoelectronic materials, very little work has been done to master the growth conditions and optimize the resulting superlattice properties. In this work, we present the results of a preliminary investigation of SLSs grown by low-pressure metal-organic vapour phase epitaxy. Two different series of samples were grown to check independently the effect of well thickness and barrier composition. In both cases, in order to conserve one layer nominally lattice-matched to InP, the wells had a standard composition In0.53Ga0.47As.
引用
收藏
页码：244 / 248
页数：5
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