LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET

被引：26

作者：

LAVIRON, M

DELAGEBEAUDEUF, D

DELESCLUSE, P

CHAPLART, J

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 15期

关键词：

D O I：

10.1049/el:19810375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：536 / 537

页数：2

共 50 条

[1] LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS MESFETS
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INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 585 - 586
[2] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
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[3] HIGH-SPEED TWO-DIMENSIONAL ELECTRON-GAS FET LOGIC
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[4] LOW AND HIGH-FIELD TRANSPORT-PROPERTIES IN TWO-DIMENSIONAL ELECTRON-GAS FET
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[5] ACOUSTIC AND PIEZOELECTRIC SCATTERING OF TWO-DIMENSIONAL ELECTRON-GAS IN JUNCTION FET STRUCTURES
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[6] CONDUCTIVITY OF A TWO-DIMENSIONAL ELECTRON-GAS
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[7] MAGNETIZATION OF A TWO-DIMENSIONAL ELECTRON-GAS
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[8] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
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[9] PLANAR ENHANCEMENT MODE TWO-DIMENSIONAL ELECTRON-GAS FET ASSOCIATED WITH A LOW ALGAAS SURFACE-POTENTIAL
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[10] COHERENT ELECTRON FOCUSING IN A TWO-DIMENSIONAL ELECTRON-GAS
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