SELECTIVE METALORGANIC REACTIVE ION ETCHING OF MOLECULAR-BEAM EPITAXY GAAS/ALXGA1-XAS

被引：7
|
作者：
LAW, VJ [1 ]
JONES, GAC [1 ]
RITCHIE, DA [1 ]
PEACOCK, DC [1 ]
FROST, JEF [1 ]
机构：
[1] GEC LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词：
D O I：
10.1116/1.584516
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1479 / 1482
页数：4
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