OPTICAL-ABSORPTION EDGE OF SPUTTERED HYDROGENATED AMORPHOUS SILICON

被引：0

作者：

FREEMAN, EC ^{[1
]}

PAUL, W ^{[1
]}

机构：

[1] HARVARD UNIV,BOSTON,MA 02115

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：249 / 249

页数：1

共 50 条

[1] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON
CODY, GD
TIEDJE, T
ABELES, B
MOUSTAKAS, TD
BROOKS, B
GOLDSTEIN, Y
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 301 - 304
[2] PHOTOGENERATION, OPTICAL-ABSORPTION AND TRANSPORT IN HYDROGENATED SPUTTERED AMORPHOUS-SILICON
MOUSTAKAS, TD
[J]. SOLID STATE COMMUNICATIONS, 1980, 35 (10) : 745 - 751
[3] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON
CODY, GD
TIEDJE, T
ABELES, B
BROOKS, B
GOLDSTEIN, Y
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483
[4] LIGHT-INDUCED OPTICAL-ABSORPTION CHANGES IN SPUTTERED HYDROGENATED AMORPHOUS-SILICON
ZHANG, PX
TAN, CL
ZHU, QR
PENG, SQ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 417 - 420
[5] OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON STUDIED BY PHOTOACOUSTIC-SPECTROSCOPY
YAMASAKI, S
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (01): : 79 - 97
[6] OPTICAL-ABSORPTION BY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
PANKOVE, JI
POLLAK, FH
SCHNABOLK, C
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 459 - 462
[7] OPTICAL-ABSORPTION IN SPUTTERED AMORPHOUS PHOSPHORUS
PILIONE, LJ
POMIAN, RJ
LANNIN, JS
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (08) : 933 - 936
[8] QUANTUM SHIFT OF THE OPTICAL-ABSORPTION EDGE IN ULTRATHIN AMORPHOUS HYDROGENATED GERMANIUM
YANG, L
ABELES, B
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 264 - 266
[9] TEMPERATURE AND DOPING DEPENDENCE OF THE OPTICAL-ABSORPTION IN AMORPHOUS HYDROGENATED SILICON FILMS
TARDY, J
CACHARD, A
MEAUDRE, R
[J]. THIN SOLID FILMS, 1982, 89 (03) : 270 - 270
[10] THEORETICAL-STUDY OF OPTICAL-ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON
PICKETT, WE
PAPACONSTANTOPOULOS, DA
ECONOMOU, EN
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2232 - 2234

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