Porous silicon nanowires: synthesis and applications

被引：0
|
作者：
Jouiad, Mustapha [1 ]
Najar, Adel [2 ]
机构：
[1] Masdar Inst Sci & Technol, Mech & Mat Engn Dept, Abu Dhabi 54224, U Arab Emirates
[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
BIOINTERFACE RESEARCH IN APPLIED CHEMISTRY | 2015年 / 5卷 / 02期
关键词：
Porous Silicon NanoWires; gas detection; SERS; TEM; Electron tomography; 3D imaging;
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 3D TEM image for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm.In this review, we present two applications for of PSiNWs for gas detection and using surface-enhanced Raman spectroscopy (SERS) effect for organic molecules detection.
引用
收藏
页码：932 / 936
页数：5
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